aot11s65/AOB11S65/aotf11s65 650v 11a mos tm power transistor general description product summary v ds @ t j,max 750v i dm 45a r ds(on),max 0.399 q g,typ 13.2nc e oss @ 400v 2.9 j 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: aot11s65l & AOB11S65l & aotf11s65l symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt h t j , t stg t l symbol r ja r cs r jc * drain current limited by maximum junction temperatur e. single pulsed avalanche energy g w p d v/ns mj the aot11s65 & AOB11S65 & aotf11s65 have been fabricated using the advanced mos tm high voltage process that is designed to deliver high levels of performance and robustness in switching applications. by providing low r ds(on) , q g and e oss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supp ly designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted aot11s65/AOB11S65 drain-source voltage 100 i d a mj 11 parameter aotf11s65 c 39 198 derate above 25 o c 0.31 t c =25c 60 120 a w/ o c t c =100c pulsed drain current c gate-source voltage v t c =25c c/w avalanche current c 8* 8 continuous drain current 11* junction and storage temperature range repetitive avalanche energy c maximum junction-to-case 0.63 c 0.5 -- c/w aotf11s65 65 c/w units thermal characteristics 65 maximum case-to-sink a maximum junction-to-ambient a,d 11* 8* 65 -- maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds j 300 power dissipation b dv/dt 2 4 aotf11s65l 31 0.25 -55 to 150 20 1.6 3.25 aot11s65/AOB11S65 aotf11s65l 650 30 45 to-263 d 2 pak g d s g d s d s g top view to-220f to-220 aot11s65 AOB11S65 aotf11s65 rev1: mar 2012 www.aosmd.com page 1 of 7 downloaded from: http:///
aot11s65/AOB11S65/aotf11s65 symbol min typ max units 650 - - 700 750 - - - 1 - 10 - i gss gate-body leakage current - - 100 n v gs(th) gate threshold voltage 2.6 3.3 4 v - 0.35 0.399 - 0.98 1.11 v sd - 0.82 - v i s maximum body-diode continuous current - - 11 a i sm - - 45 a c iss - 646 - pf c oss - 42 - pf c o(er) - 33 - pf c o(tr) - 117 - pf c rss - 1.1 - pf r g - 18 - q g - 13.2 - nc q gs - 3.2 - nc q gd - 4.3 - nc t d(on) - 25 - ns t r - 20 - ns t d(off) - 77 - ns t f - 19 - ns t rr - 278 - ns i rm - 22 - a q rr - 4.2 - c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. output capacitance diode forward voltage i f =5.5a,di/dt=100a/ s,v ds =400v reverse transfer capacitance v gs =0v, v ds =100v, f=1mhz gate resistance v gs =0v, v ds =0 to 480v, f=1mhz effective output capacitance, time related i i s =5.5a,v gs =0v, t j =25c input capacitance v gs =0v, v ds =100v, f=1mhz body diode reverse recovery time gate source charge turn-off delaytime effective output capacitance, energy related h v gs =10v, v ds =400v, i d =5.5a, r g =25 turn-off fall time total gate charge v gs =10v, v ds =480v, i d =5.5a gate drain charge body diode reverse recovery charge i f =5.5a,di/dt=100a/ s,v ds =400v maximum body-diode pulsed current c turn-on delaytime dynamic parameters turn-on rise time peak reverse recovery current i f =5.5a,di/dt=100a/ s,v ds =400v v gs =0v, v ds =0v, f=1mhz switching parameters r ds(on) static drain-source on-resistance i dss v gs =10v, i d =5.5a, t j =150c v gs =10v, i d =5.5a, t j =25c v ds =5v,i d =250 a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions a v ds =0v, v gs =30v bv dss v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c v ds =650v, v gs =0v v ds =520v, t j =150c zero gate voltage drain current i d =250 a, v gs =0v, t j =150c a. the value of r ja is measured with the device in a still air environ ment with t a =25c. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is use d. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c, ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedance from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. l=60mh, i as =2a, v dd =150v, starting t j =25c h. c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss. i. c o(tr) is a fixed capacitance that gives the same chargin g time as c oss while v ds is rising from 0 to 80% v (br)dss. j. wavesoldering only allowed at leads. rev1: mar 2012 www.aosmd.com page 2 of 7 downloaded from: http:///
aot11s65/AOB11S65/aotf11s65 typical electrical and thermal characteristics 0 5 10 15 20 25 0 5 10 15 20 v ds (volts) figure 1: on-region characteristics@25c i d (a) v gs =4.5v 6v 10v 7v 0.01 0.1 1 10 100 2 4 6 8 10 v gs (volts) figure 3: transfer characteristics i d (a) -55c v ds =20v 25c 125c 0.0 0.3 0.6 0.9 1.2 0 5 10 15 20 25 i d (a) figure 4: on-resistance vs. drain current and gate voltage r ds(on) ( ? ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 5: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =5.5a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 6: break down vs. junction temperature bv dss (normalized) 0 4 8 12 16 20 0 5 10 15 20 v ds (volts) figure 2: on-region characteristics@125c i d (a) v gs =4.5v 5v 10v 6v 5v 5.5v 5.5v 7v rev1: mar 2012 www.aosmd.com page 3 of 7 downloaded from: http:///
aot11s65/AOB11S65/aotf11s65 typical electrical and thermal characteristics 0 3 6 9 12 15 0 4 8 12 16 20 q g (nc) figure 8: gate-charge characteristics v gs (volts) v ds =480v i d =5.5a 0 1 10 100 1000 10000 0 100 200 300 400 500 600 v ds (volts) figure 9: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 11: maximum forward biased safe operating area for aot(b)11s65 (note f) 10 s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 s 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 12: maximum forward biased safe operating area for aotf11s65(note f) 10 s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 s 1s 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 7: body-diode characteristics (note e) i s (a) 25c 125c 0 1 2 3 4 5 6 0 100 200 300 400 500 600 v ds (volts) figure 10: coss stored energy eoss(uj) e oss rev1: mar 2012 www.aosmd.com page 4 of 7 downloaded from: http:///
aot11s65/AOB11S65/aotf11s65 typical electrical and thermal characteristics 0 2 4 6 8 10 12 0 25 50 75 100 125 150 t case (c) figure 15: current de-rating (note b) current rating i d (a) 0 30 60 90 120 150 25 50 75 100 125 150 175 t case (c) figure 14: avalanche energy e as (mj) 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 13: maximum forward biased safe operating area for aotf11s65l(note f) 10 s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 s 1s rev1: mar 2012 www.aosmd.com page 5 of 7 downloaded from: http:///
aot11s65/AOB11S65/aotf11s65 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 16: normalized maximum transient thermal imp edance for aot(b)11s65 (note f) z ? jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =0.63c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 17: normalized maximum transient thermal imp edance for aotf11s65 (note f) z ? jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =3.25c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 18: normalized maximum transient thermal imp edance for aotf11s65l (note f) z ? jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =4c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d t on t p d t on t p d rev1: mar 2012 www.aosmd.com page 6 of 7 downloaded from: http:///
aot11s65/AOB11S65/aotf11s65 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev1: mar 2012 www.aosmd.com page 7 of 7 downloaded from: http:///
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